elektronische bauelemente SJV01N65B 1a , 650v , r ds(on) 14 ? n-channel enhancement mode power mosfet 07-may-2013 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the high voltage mosfet uses an advanced termination scheme to provide enhanced voltage-bloc king capability without degrading performance over time. in addition, this advanced mosfet is designed to withstand high energy in avalanche and commutation modes . the new energy efficient design also offers a drain-to-source diod e with a fast recovery time. designed for high voltage, high speed switching applications in power suppliers, converte rs and pwm motor controls ,these devices are particularly well suited for bridge circuits where diode speed and co mmutating safe operating areas are critical and offer additio nal and safety margin against unexpected voltage transients. features robust high voltage termination avalanche energy specified source-to-drain diode recovery time comparable to a discrete fast recovery diode diode is characterized for use in bridge circuits i dss and v ds(on) specified at elevated temperature absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 20 v continuous drain current i d 1 a pulsed drain current i dm 4 a power dissipation p d 0.625 w single pulsed avalanche energy 1 e as 5 mj thermal resistance junction-ambient(max). r ja 200 c / w maximum lead temperure for soldering purposes , 1/8from case for 5 seconds t l 260 c operating junction & storage temperature t j , t stg 150, -50~150 c notes: 1. e as condition: t j =25c, v dd =50v, v gs =10v, l=10mh, i l =1a, r g =25 . to-92 1 g 3 s d 2 a c e f d g h j b 1 11 1 gate 2 22 2 drain 3 33 3 source millimeter millimeter ref. min. max. ref. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76
elektronische bauelemente SJV01N65B 1a , 650v , r ds(on) 14 ? n-channel enhancement mode power mosfet 07-may-2013 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions drain-source breakdown voltage v (br)dss 650 - - v v gs =0, i d =250 a gate threshold voltage 1 v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current 1 i gss - - 100 na v ds =0, v gs = 20v drain-source leakage current i dss - - 100 a v ds =600v, v gs =0 static drain-source on-resistance 1 r ds(on) - - 14 v gs =10v, i d =0.6a forward on voltage 1 v sd - - 1.5 v i s =1a, v gs =0 dynamic characteristics 2 input capacitance c iss - 210 - output capacitance c oss - 28 - reverse transfer capacitance c rss - 4.2 - pf v gs =0 v ds =25v f=1.0 mhz switching characteristics 2 total gate charge q g - 5 - gate-source charge q gs - 2.7 - gate-drain charge q gd - 2 - nc v ds =480v, v gs =10v, i d =4a turn-on delay time t d(on) - 8 - rise time t r - 21 - turn-off delay time t d(off) - 18 - fall time t f - 24 - ns v dd =300v i d =1a v gs =10v r g =18 notes: 1. pulse test : pulse width Q 300 s, duty cycle Q 2%. 2. these parameters have no way to verify.
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